| PART |
Description |
Maker |
| STP11NM60 |
N-CHANNEL 600V - 0.4Ohm - 11A TO-220 Mdmesh Power MOSFET
|
SGS Thomson Microelectronics
|
| STP11NM60_07 STB11NM60 STB11NM60-1 STB11NM60T4 STP |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STD1NB60 |
N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET
|
http://
STMicroelectronics
SGS Thomson Microelectronics
|
| STU11NC60 |
N-CHANNEL 600V - 0.48Ohm - 11A Max220 PowerMesh II MOSFET
N-CHANNEL 600V - 0.48ohm - 11A Max220 PowerMeshII MOSFET
N沟道600V 0.48ohm - 11A条Max220 PowerMeshII MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| AOW11S60 AOWF11S60 |
600V 11A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
| AOTF11S60 AOT11S60 AOB11S60 |
600V 11A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| IRFPC50LC |
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
|
IRF[International Rectifier]
|
| RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6013DPP-E0 RJK6013DPP-E0-15 |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STD3NC50 |
N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET
|
意法半导
STMicroelectronics
|
